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MMDF6N03HD Datasheet

  • MMDF6N03HD

  • DUAL TMOS POWER MOSFET 30 VOLTS

  • 10頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF6N03HD/D
Designer's
鈩?/div>
Data Sheet
Medium Power Surface Mount Products
MMDF6N03HD
Motorola Preferred Device
TMOS Dual N-Channel
Field Effect Transistors
Dual HDTMOS devices are an advanced series of power
MOSFETs which utilize Motorola鈥檚 High Cell Density TMOS
process. These miniature surface mount MOSFETs feature low
RDS(on) and true logic level performance. Dual HDTMOS devices
are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applica-
tions are dc鈥揹c converters, and power management in portable
and battery powered products such as computers, printers, cellular
and cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO鈥? Package Provided
G
鈩?/div>
DUAL TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 35 m
W
D
CASE 751鈥?5, Style 11
SO鈥?
S
D
Source鈥?
Gate鈥?
Source鈥?
1
2
3
4
8
7
6
5
Drain鈥?
Drain鈥?
Drain鈥?
Drain鈥?
G
S
Gate鈥?
Top View
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous @ TA = 25擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Source Current 鈥?Continuous @ TA = 25擄C
Total Power Dissipation @ TA = 25擄C (1)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25
W
)
Thermal Resistance 鈥?Junction鈥搕o鈥揂mbient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from Case for 10 sec.
Symbol
VDSS
VGS
ID
IDM
IS
PD
TJ, Tstg
EAS
R
胃JA
TL
Value
30
鹵
20
6.0
30
1.7
2.0
鈥?55 to 150
325
62.5
260
Unit
Vdc
Vdc
Adc
Apk
Adc
Watts
擄C
mJ
擄C/W
擄C
DEVICE MARKING
D6N03
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
MMDF6N03HDR2
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
2500
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Designer鈥檚 and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1

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