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MMDF4C03HD Datasheet

  • MMDF4C03HD

  • COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS

  • 278.90KB

  • 12頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF4C03HD/D
Advance Information
Medium Power Surface Mount Products
Complementary TMOS
Field Effect Transistors
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola鈥檚 High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain鈥搕o鈥搒ource diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc鈥揹c converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
鈥?/div>
Ultra Low RDS(on) Provides Higher Efficiency and
Extends Battery Life
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
鈥?/div>
Miniature SO鈥? Surface Mount Package 鈥?/div>
Saves Board Space
鈥?/div>
Ideal for Synchronous Rectification
鈥?/div>
Diode Exhibits High Speed, With Soft Recovery
鈥?/div>
IDSS Specified at Elevated Temperature
鈥?/div>
Mounting Information for SO鈥? Package Provided
MMDF4C03HD
Motorola Preferred Device
鈩?/div>
COMPLEMENTARY
DUAL TMOS POWER FET
30 VOLTS
N鈥揅H RDS(on) = 50 m
W
P鈥揅H RDS(on) = 85 m
W
P鈥揝
P鈥揋
CASE 751鈥?5, Style 11
SO鈥?
D
N鈥揝ource
N鈥揋ate
P鈥揝ource
N鈥揋
N鈥揝
P鈥揋ate
1
2
3
4
8
7
6
5
Drain
Drain
Drain
Drain
Top View
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage
Drain Current 鈥?Continuous
Drain Current 鈥?Pulsed
Operating and Storage Temperature Range
Total Power Dissipation @ TA = 25擄C (1)
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 30 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25
W
)
(VDD = 30 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25
W
)
Thermal Resistance 鈥?Junction鈥搕o鈥揂mbient (1)
Symbol
VDSS
VGS
ID
IDM
TJ, Tstg
PD
EAS
N鈥揅hannel
P鈥揅hannel
R
胃JA
TL
325
450
50
260
擄C/W
擄C
Polarity
鈥?/div>
鈥?/div>
N鈥揅hannel
P鈥揅hannel
N鈥揅hannel
P鈥揅hannel
鈥?/div>
Value
30
鹵
20
5.5
4.4
25
20
鈥?5 to +150
2.5
擄C
Watts
mJ
Apk
Unit
Vdc
Vdc
Adc
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from Case for 10 sec.
DEVICE MARKING
D4C03
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
MMDF4C03HDR2
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
2500
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1

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