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MMDF3N06HD Datasheet

  • MMDF3N06HD

  • DUAL TMOS POWER MOSFET 60 VOLTS

  • 10頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF3N06HD/D
Advance Information
Medium Power Surface Mount Products
MMDF3N06HD
Motorola Preferred Device
TMOS Dual N-Channel
Field Effect Transistors
Dual HDTMOS are an advanced series of power MOSFETs
which utilize Motorola鈥檚 High Cell Density TMOS process. These
miniature surface mount MOSFETs feature low RDS(on) and true
logic level performance. Dual HDTMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc鈥揹c converters,
and power management in portable and battery powered products
such as computers, printers, cellular and cordless phones. They
can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO鈥? Package Provided
DUAL TMOS
POWER MOSFET
60 VOLTS
RDS(on) = 100 m
W
鈩?/div>
D
G
S
D
CASE 751鈥?5, Style 11
SO鈥?
Source鈥?
Gate鈥?
Source鈥?
G
S
Gate鈥?
1
2
3
4
8
7
6
5
Drain鈥?
Drain鈥?
Drain鈥?
Drain鈥?
Top View
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous @ TA = 25擄C
Source Current 鈥?Continuous @ TA = 25擄C
Total Power Dissipation @ TA = 25擄C (1)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 60 Vdc, VGS = 5.0 Vdc, VDS = 32 Vdc, IL = 15 Apk, L = 10 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction鈥搕o鈥揂mbient
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VGS
ID
IDM
IS
PD
TJ, Tstg
EAS
105
R
胃JA
TL
62.5
260
擄C/W
擄C
Value
60
鹵
20
3.3
16.5
1.7
2.0
鈥?55 to 150
Unit
Vdc
Vdc
Adc
Apk
Adc
Watts
擄C
mJ
DEVICE MARKING
D3N06
ORDERING INFORMATION
Device
MMDF3N06HDR2
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
2500 units
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1

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