鈩?/div>
Data Sheet
Medium Power Surface Mount Products
MMDF3N04HD
Motorola Preferred Device
TMOS Dual N-Channel
Field Effect Transistor
MiniMOS鈩?devices are an advanced series of power MOSFETs
which utilize Motorola鈥檚 High Cell Density HDTMOS process. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. They are capable of withstanding high energy
in the avalanche and commutation modes and the drain鈥搕o鈥搒ource
diode has a very low reverse recovery time. MiniMOS devices are
designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dc鈥揹c
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives. The avalanche energy is
specified to eliminate the guesswork in designs where inductive loads
are switched and offer additional safety margin against unexpected
G
voltage transients.
鈥?/div>
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
鈥?/div>
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, With Soft Recovery
鈥?/div>
IDSS Specified at Elevated Temperature
鈥?/div>
Mounting Information for SO鈥? Package Provided
鈥?/div>
Avalanche Energy Specified
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous @ TA = 25擄C (1)
Drain Current
鈥?Continuous @ TA = 70擄C (1)
Drain Current
鈥?Pulsed Drain Current (4)
Total Power Dissipation @ TA = 25擄C (1)
Linear Derating Factor (1)
Total Power Dissipation @ TA = 25擄C (2)
Linear Derating Factor (2)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 4.0 mH, VDS = 40 Vdc)
DUAL TMOS
POWER MOSFET
3.4 AMPERES
40 VOLTS
RDS(on) = 0.080 OHM
鈩?/div>
D
CASE 751鈥?5, Style 14
SO鈥?
S
Source鈥?
Gate鈥?
Source鈥?
Gate鈥?
1
2
3
4
8
7
6
5
Drain鈥?
Drain鈥?
Drain鈥?
Drain鈥?
Top View
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
PD
TJ, Tstg
EAS
Value
40
40
鹵
20
3.4
3.0
40
2.0
16
1.39
11.11
鈥?55 to 150
162
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
mW/擄C
Watts
mW/擄C
擄C
mJ
THERMAL RESISTANCE
Rating
Symbol
Typ.
鈥?/div>
鈥?/div>
Max.
62.5
90
Unit
擄C/W
Thermal Resistance 鈥?Junction to Ambient, PCB Mount (1)
R
胃JA
R
胃JA
鈥?Junction to Ambient, PCB Mount (2)
(1) When mounted on 1 inch square FR鈥? or G鈥?0 board (VGS = 10 V, @ 10 Seconds)
(2) When mounted on minimum recommended FR鈥? or G鈥?0 board (VGS = 10 V, @ Steady State)
DEVICE MARKING
D3N04H
Device
MMDF3N04HDR2
ORDERING INFORMATION
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
2500 units
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Preferred devices
are Motorola recommended choices for future use and best overall value.
HDTMOS, MiniMOS, and Designer鈥檚 are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Micro鈥? is a registered trademark of International Rectifier. Thermal Clad is a trademark of the Berquist Company.
REV 1
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1
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