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MMDF3N03HDR2 Datasheet

  • MMDF3N03HDR2

  • Power MOSFET 3 Amps, 30 Volts

  • 122.63KB

  • 12頁(yè)

  • ONSEMI

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MMDF3N03HD
Preferred Device
Power MOSFET
3 Amps, 30 Volts
N鈥揅hannel SO鈥?, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain鈥搕o鈥搒ource diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc鈥揹c converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
鈥?/div>
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
鈥?/div>
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, With Soft Recovery
鈥?/div>
IDSS Specified at Elevated Temperature
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Mounting Information for SO鈥? Package Provided
8
http://onsemi.com
3 AMPERES
30 VOLTS
RDS(on) = 70 mW
N鈥揅hannel
D
G
S
MARKING
DIAGRAM
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous @ TA = 25擄C
Drain Current
鈥?Continuous @ TA = 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation @ TA = 25擄C
(Note 1.)
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting TJ = 25擄C
(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak
IL = 9.0 Apk, L = 8.0 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Ambient
(Note 1.)
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
Value
30
30
鹵
20
4.1
3.0
40
2.0
鈥?55 to
150
324
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
擄C
mJ
1
L
Y
WW
SO鈥?, Dual
CASE 751
STYLE 11
D3N03
LYWW
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
Source鈥?
Gate鈥?
Source鈥?
Gate鈥?
1
2
3
4
8
7
6
5
Drain鈥?
Drain鈥?
Drain鈥?
Drain鈥?
Top View
R
胃JA
TL
62.5
260
擄C/W
擄C
ORDERING INFORMATION
Device
MMDF3N03HDR2
Package
SO鈥?
Shipping
2500 Tape & Reel
1. When mounted on 2鈥?square FR鈥? board (1鈥?square 2 oz. Cu 0.06鈥?thick
single sided) with one die operating, 10s max.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2000
1
November, 2000 鈥?Rev. 7
Publication Order Number:
MMDF3N03HD/D

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