WaveFET鈩?devices are an advanced series of power MOSFETs which utilize Motorola鈥檚
latest MOSFET technology process to achieve the lowest possible on鈥搑esistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain鈥搕o鈥搒ource diode has a very low reverse recovery time. WaveFET鈩?/div>
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc鈥揹c converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
鈥?/div>
Zener Protected Gates Provide Electrostatic
Discharge Protection
鈥?/div>
Designed to withstand 200 V Machine Model
and 2000 V Human Body Model
鈥?/div>
Low RDS(on) Provides Higher Efficiency and
Extends Battery Life
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by
Logic ICs
鈥?/div>
Miniature SO鈥? Surface Mount Package 鈥?/div>
Saves Board Space
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, With Soft Recovery
鈥?/div>
IDSS Specified at Elevated Temperature
鈥?/div>
Mounting Information for SO鈥? Package Provided
7
8
N1鈥揇RAIN
CASE 751鈥?6, Style 11
SO鈥?
N1鈥揝ource
N1鈥揋ATE
2
1
N1鈥揝OURCE
5
6
N2鈥揇RAIN
N1鈥揋ate
N2鈥揝ource
N2鈥揋ate
1
2
3
4
8
7
6
5
N1鈥揇rain
N1鈥揇rain
N2鈥揇rain
N2鈥揇rain
TOP VIEW
N2鈥揋ATE
4
3
N2鈥揝OURCE
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGS
TJ, Tstg
Max
20
20
鹵
12
鈥?55 to 150
Unit
V
V
V
擄C
DEVICE MARKING
D3200
Device
MMDF3200Z
ORDERING INFORMATION
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
4000 units
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1
MMDF3200Z相關(guān)型號(hào)PDF文件下載
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英文版
Power MOSFET 3 Amps, 25 Volts
ONSEMI
-
英文版
Power MOSFET 3 Amps, 25 Volts
ONSEMI [ON...
-
英文版
DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS
-
英文版
DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS
MOTOROLA [...
-
英文版
Medium Power Surface Mount Products
-
英文版
DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM
-
英文版
DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM
MOTOROLA [...
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英文版
COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS
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英文版
COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS
MOTOROLA [...
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英文版
DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS
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英文版
DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS
MOTOROLA [...
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英文版
DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS
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英文版
DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS
MOTOROLA [...
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英文版
DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS
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英文版
DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS
MOTOROLA [...
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英文版
DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS
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英文版
DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS
MOTOROLA [...
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英文版
DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS
-
英文版
DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS
MOTOROLA [...
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英文版
DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS
MOTOROLA
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