鈩?/div>
Data Sheet
Medium Power Surface Mount Products
TMOS Dual P-Channel
Field Effect Transistors
MMDF2P02E
MiniMOS鈩?devices are an advanced series of power MOSFETs
which utilize Motorola鈥檚 TMOS process. These miniature surface
mount MOSFETs feature ultra low RDS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain鈥搕o鈥搒ource diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc鈥揹c
converters, and power management in portable and battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
G
additional safety margin against unexpected voltage transients.
鈥?/div>
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
鈥?/div>
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, with Soft Recovery
鈥?/div>
IDSS Specified at Elevated Temperatures
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Mounting Information for SO鈥? Package Provided
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)(1)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous @ TA = 25擄C
Drain Current
鈥?Continuous @ TA = 100擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation @ TA = 25擄C (2)
Derate above 25擄C
Operating and Storage Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 20 Vdc, VGS = 10 Vdc, Peak IL = 7.0 Apk, L = 10 mH, RG = 25
鈩?
Thermal Resistance, Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes, 0.0625鈥?from case for 10 seconds
DUAL TMOS MOSFET
2.5 AMPERES
25 VOLTS
RDS(on) = 0.250 OHM
廬
D
CASE 751鈥?5, Style 11
SO鈥?
S
Source鈥?
Gate鈥?
Source鈥?
Gate鈥?
1
2
3
4
8
7
6
5
Drain鈥?
Drain鈥?
Drain鈥?
Drain鈥?
Top View
Symbol
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
R
胃JA
TL
Value
25
鹵
20
2.5
1.7
13
2.0
16
鈥?55 to 150
245
62.5
260
Unit
Vdc
Vdc
Adc
Apk
W
mW/擄C
擄C
mJ
擄C/W
擄C
DEVICE MARKING
F2P02
(1) Negative sign for P鈥揅hannel device omitted for clarity.
(2) Mounted on 2鈥?square FR4 board (1鈥?sq. 2 oz. Cu 0.06鈥?thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device
MMDF2P02ER2
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
2500
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Designer鈥檚, E鈥揊ET and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
REV 5
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1
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