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MMDF2N05ZR2 Datasheet

  • MMDF2N05ZR2

  • DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS

  • 195.22KB

  • 10頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF2N05ZR2/D
Designer's
鈩?/div>
Data Sheet
Medium Power Surface Mount Products
MMDF2N05ZR2
Motorola Preferred Device
TMOS Dual N-Channel with
Monolithic Zener ESD
Protected Gate
EZFETs鈩?are an advanced series of power MOSFETs which
utilize Motorola鈥檚 High Cell Density TMOS process and contain
monolithic back鈥搕o鈥揵ack zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low RDS(on) and
true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the
drain鈥搕o鈥搒ource diode has a very low reverse recovery time.
EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc鈥揹c converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈩?/div>
DUAL TMOS
POWER MOSFET
2.0 AMPERES
50 VOLTS
RDS(on) = 0.300 OHM
D
G
S
CASE 751鈥?5, Style 11
SO鈥?
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO鈥? Package Provided
Source鈥?
Gate鈥?
Source鈥?
Gate鈥?
1
2
3
4
8
7
6
5
Drain鈥?
Drain鈥?
Drain鈥?
Drain鈥?
Top View
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous @ TA = 25擄C
Drain Current
鈥?Continuous @ TA = 70擄C
Drain Current
鈥?Single Pulse (tp
鈮?/div>
10
碌s)
Total Power Dissipation @ TA = 25擄C (1)
Operating and Storage Temperature Range
Thermal Resistance 鈥?Junction to Ambient
Maximum Temperature for Soldering Purposes
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
R
胃JA
TL
Value
50
50
鹵
15
2.0
1.7
8.0
2.0
鈥?55 to 150
62.5
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
擄C
擄C/W
擄C
DEVICE MARKING
D2N05Z
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF2N05ZR2
13鈥?/div>
12 mm embossed tape
2500 units
(1) When mounted on G10/FR鈥? glass epoxy board using minimum recommended footprint.
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Preferred devices
are Motorola recommended choices for future use and best overall value.
Designer鈥檚, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-
mark of the Bergquist Company.
REV 1
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1

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