鈩?/div>
Data Sheet
Medium Power Surface Mount Products
Complementary TMOS
Field Effect Transistors
MMDF2C03HD
Motorola Preferred Device
MiniMOS鈩?devices are an advanced series of power MOSFETs
which utilize Motorola鈥檚 High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain-to-source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc-dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
鈥?/div>
Miniature SO-8 Surface Mount Package 鈥?Saves Board Space
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, With Soft Recovery
鈥?/div>
IDSS Specified at Elevated Temperature
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Mounting Information for SO-8 Package Provided
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)(1)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage
Drain Current 鈥?Continuous N鈥揅hannel
P鈥揅hannel
Drain Current
鈥?Pulsed
N鈥揅hannel
P鈥揅hannel
Operating and Storage Temperature Range
Total Power Dissipation @ TA= 25擄C (2)
Thermal Resistance 鈥?Junction to Ambient (2)
鈩?/div>
COMPLEMENTARY
DUAL TMOS POWER FET
2.0 AMPERES
30 VOLTS
RDS(on) = 0.070 OHM
(N-CHANNEL)
RDS(on) = 0.200 OHM
(P-CHANNEL)
D
N鈥揅hannel
G
S
D
P鈥揅hannel
CASE 751鈥?5, Style 14
SO鈥?
N鈥揝ource
N鈥揋ate
G
S
Symbol
VDSS
VGS
ID
IDM
TJ, Tstg
PD
R
胃JA
EAS
P鈥揝ource
P鈥揋ate
1
2
3
4
8
7
6
5
N鈥揇rain
N鈥揇rain
P鈥揇rain
P鈥揇rain
Top View
Value
30
鹵
20
4.1
3.0
21
15
鈥?55 to 150
2.0
62.5
324
324
TL
260
擄C
Unit
Vdc
Vdc
A
擄C
Watts
擄C/W
mJ
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 30 V, VGS = 5.0 V, Peak IL = 9.0 Apk, L = 8.0 mH, RG = 25
鈩?
N鈥揅hannel
(VDD = 30 V, VGS = 5.0 V, Peak IL = 6.0 Apk, L = 18 mH, RG = 25
鈩?
P鈥揅hannel
Maximum Lead Temperature for Soldering, 0.0625鈥?from case. Time in Solder Bath is 10 seconds.
DEVICE MARKING
D2C03
(1) Negative signs for P鈥揅hannel device omitted for clarity.
(2) Mounted on 2鈥?square FR4 board (1鈥?sq. 2 oz. Cu 0.06鈥?thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device
MMDF2C03HDR2
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
2500 units
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 5
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1
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