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MMDF2C03HD

Preferred Device

Power MOSFET

2 Amps, 30 Volts

Complementary SO鈭?, Dual

These miniature surface mount MOSFETs feature ultra low R

DS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain-to-source diode has a very low reverse recovery time.

MiniMOSt devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc-dc converters, and power management in portable

and battery powered products such as computers, printers, cellular and

cordless phones. They can also be used for low voltage motor controls

in mass storage products such as disk drives and tape drives. The

avalanche energy is specified to eliminate the guesswork in designs

where inductive loads are switched and offer additional safety margin

against unexpected voltage transients.

Features

http://onsemi.com

2 AMPERES, 30 VOLTS

R

DS(on)

= 70 mW (N-Channel)

R

DS(on)

= 200 mW (P-Channel)

N鈭扖hannel

D

P鈭扖hannel

D

鈥?/div>

G

S

G

S

Ultra Low R

DS(on)

Provides Higher Efficiency and Extends Battery Life

Logic Level Gate Drive 鈭?Can Be Driven by Logic ICs

Miniature SO-8 Surface Mount Package 鈭?Saves Board Space

Diode Is Characterized for Use In Bridge Circuits

Diode Exhibits High Speed, With Soft Recovery

I

DSS

Specified at Elevated Temperature

Avalanche Energy Specified

Mounting Information for SO-8 Package Provided

Pb鈭扚ree Package is Available

Rating

Symbol

V

DSS

V

GS

N鈭扖hannel

P鈭扖hannel

N鈭扖hannel

P鈭扖hannel

I

D

I

DM

T

J

, T

stg

P

D

R

qJA

E

AS

324

T

L

260

擄C

Value

30

鹵

20

4.1

3.0

21

15

鈭?55 to 150

2.0

62.5

Unit

Vdc

A

MARKING

DIAGRAM

8

1

SO鈭?

CASE 751

STYLE 14

1

D2C03

AYWWG

G

MAXIMUM RATINGS

(T

J

= 25擄C unless otherwise noted) (Note 1)

Drain鈭抰o鈭扴ource Voltage

Gate鈭抰o鈭扴ource Voltage

Drain Current 鈭?Continuous

Drain Current

鈭?Pulsed

D2C03 = Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb鈭扚ree Package

(Note: Microdot may be in either location)

Operating and Storage Temperature Range

Total Power Dissipation @ T

A

= 25擄C (Note 2)

Thermal Resistance, Junction鈭抰o鈭扐mbient

(Note 2)

Single Pulse Drain鈭抰o鈭扴ource Avalanche

Energy 鈭?Starting T

J

= 25擄C

(V

DD

= 30 V, V

GS

= 5.0 V, Peak I

L

= 9.0 Apk,

N鈭扖hannel

L = 8.0 mH, R

G

= 25

W)

(V

DD

= 30 V, V

GS

= 5.0 V, Peak I

L

= 6.0 Apk,

P鈭扖hannel

L = 18 mH, R

G

= 25

W)

Max Lead Temperature for Soldering, 0.0625鈥?/div>

from case. Time in Solder Bath is 10 seconds

擄C

W

擄C/W

mJ

PIN ASSIGNMENT

N鈭扴ource

N鈭扜ate

P鈭扴ource

P鈭扜ate

1

2

3

4

8

7

6

5

N鈭扗rain

P鈭扗rain

ORDERING INFORMATION

Device

MMDF2C03HDR2

MMDF2C03HDR2G

Package

SO鈭?

Shipping

鈥?/div>

2500 Tape & Reel

SO鈭?

2500 Tape & Reel

(Pb鈭扚ree)

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Negative signs for P鈭扖hannel device omitted for clarity.

2. Mounted on 2鈥?square FR4 board (1鈥?sq. 2 oz. Cu 0.06鈥?thick single sided) with

one die operating, 10 sec. max.

漏

Semiconductor Components Industries, LLC, 2006

鈥燜or information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Preferred

devices are recommended choices for future use

and best overall value.

1

February, 2006 鈭?Rev. 7

Publication Order Number:

MMDF2C03HD/D

MMDF2C03HDR2G

MMDF2C03HDR2 產(chǎn)品屬性

標準包裝
2,500
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
-
FET 型
N 和 P 溝道
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
4.1A，3A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
70 毫歐 @ 3A，10V
Id 時的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
16nC @ 10V
輸入電容 (Ciss) @ Vds
630pF @ 24V
功率 - 最大
2W
安裝類型
表面貼裝
封裝/外殼
8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝
8-SOICN
包裝
帶卷 (TR)
其它名稱
MMDF2C03HDR2OSTR

MMDF2C03HDR2相關(guān)型號PDF文件下載

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MMDF2C03HDR2 Datasheet

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