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MMDF2C02HD Datasheet

  • MMDF2C02HD

  • COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS

  • 358.75KB

  • 12頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF2C02HD/D
鈩?/div>
Data Sheet
Medium Power Surface Mount Products
Complementary TMOS
Field Effect Transistors
MMDF2C02HD
Motorola Preferred Device
MiniMOS鈩?devices are an advanced series of power MOSFETs
which utilize Motorola鈥檚 High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain鈥搕o鈥搒ource diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc鈥揹c converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
鈥?/div>
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
鈥?/div>
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, With Soft Recovery
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Mounting Information for SO鈥? Package Provided
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)(1)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 m鈩?
Drain Current 鈥?Continuous
鈥?Pulsed
N鈥揅hannel
P鈥揅hannel
N鈥揅hannel
P鈥揅hannel
鈩?/div>
D
N鈥揅hannel
COMPLEMENTARY
DUAL TMOS POWER FET
2.0 AMPERES
20 VOLTS
RDS(on) = 0.090 OHM
(N鈥揅HANNEL)
RDS(on) = 0.160 OHM
(P鈥揅HANNEL)
G
CASE 751鈥?5, Style 14
SO鈥?
S
D
P鈥揅hannel
N鈥揝ource
N鈥揋ate
P鈥揝ource
G
S
Symbol
VDSS
VGS
VDGR
ID
IDM
TJ, Tstg
PD
EAS
N鈥揅hannel
P鈥揅hannel
R
胃JA
TL
405
324
62.5
260
擄C/W
擄C
P鈥揋ate
1
2
3
4
8
7
6
5
N鈥揇rain
N鈥揇rain
P鈥揇rain
P鈥揇rain
Top View
Value
20
鹵
20
20
3.8
3.3
19
20
鈥?55 to 150
2.0
Unit
Vdc
Vdc
Vdc
A
Operating and Storage Temperature Range
Total Power Dissipation @ TA= 25擄C (2)
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 20 V, VGS = 5.0 V, Peak IL = 9.0 A, L = 10 mH, RG = 25
鈩?
(VDD = 20 V, VGS = 5.0 V, Peak IL = 6.0 A, L = 18 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Ambient (2)
擄C
Watts
mJ
Maximum Lead Temperature for Soldering, 0.0625鈥?from case. Time in Solder Bath is 10 seconds.
DEVICE MARKING
D2C02
(1) Negative signs for P鈥揅hannel device omitted for clarity.
(2) Mounted on 2鈥?square FR4 board (1鈥?sq. 2 oz. Cu 0.06鈥?thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device
MMDF2C02HDR2
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
2500 units
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 5
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1

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