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MMDF2C02E Datasheet

  • MMDF2C02E

  • COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS

  • 12頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF2C02E/D
鈩?/div>
Data Sheet
Medium Power Surface Mount Products
Complementary TMOS
Field Effect Transistors
MMDF2C02E
COMPLEMENTARY
DUAL TMOS POWER FET
2.5 AMPERES
25 VOLTS
RDS(on) = 0.100 OHM
(N鈥揅HANNEL)
RDS(on) = 0.25 OHM
(P鈥揅HANNEL)
MiniMOS鈩?devices are an advanced series of power MOSFETs
which utilize Motorola鈥檚 TMOS process. These miniature surface
mount MOSFETs feature ultra low RDS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain鈥搕o鈥搒ource diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc鈥揹c
converters, and power management in portable and battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
鈥?/div>
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
鈥?/div>
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
鈥?/div>
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
鈥?/div>
Diode Is Characterized for Use In Bridge Circuits
鈥?/div>
Diode Exhibits High Speed, with Soft Recovery
鈥?/div>
Avalanche Energy Specified
鈥?/div>
Mounting Information for SO鈥? Package Provided
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)(1)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage
Drain Current 鈥?Continuous
鈥?Pulsed
N鈥揅hannel
P鈥揅hannel
N鈥揅hannel
P鈥揅hannel
廬
D
N鈥揅hannel
G
S
D
P鈥揅hannel
N鈥揝ource
N鈥揋ate
G
S
Symbol
VDSS
VGS
ID
IDM
TJ and Tstg
PD
EAS
N鈥揅hannel
P鈥揅hannel
R
胃JA
TL
245
245
62.5
260
擄C/W
擄C
P鈥揝ource
P鈥揋ate
1
2
3
4
8
7
6
5
N鈥揇rain
N鈥揇rain
P鈥揇rain
P鈥揇rain
CASE 751鈥?5, Style 14
SO鈥?
Top View
Value
25
鹵
20
3.6
2.5
18
13
鈥?55 to 150
2.0
Unit
Vdc
Vdc
Adc
Operating and Storage Temperature Range
Total Power Dissipation @ TA= 25擄C (2)
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 20 V, VGS = 10 V, Peak IL = 9.0 A, L = 6.0 mH, RG = 25
鈩?
(VDD = 20 V, VGS = 10 V, Peak IL = 7.0 A, L = 10 mH, RG = 25
鈩?
Thermal Resistance 鈥?Junction to Ambient (2)
擄C
Watts
mJ
Maximum Lead Temperature for Soldering, 0.0625鈥?from case. Time in Solder Bath is 10 seconds.
DEVICE MARKING
F2C02
(1) Negative signs for P鈥揅hannel device omitted for clarity.
(2) Mounted on 2鈥?square FR4 board (1鈥?sq. 2 oz. Cu 0.06鈥?thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device
MMDF2C02ER2
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
2500 units
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Designer鈥檚 and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
REV 5
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1

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