鈥?/div>
廬
D
G
S
CASE 751鈥?5, Style 11
SO鈥?
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive 鈥?Can Be Driven by Logic ICs
Miniature SO鈥? Surface Mount Package 鈥?Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed
Avalanche Energy Specified
Mounting Information for SO鈥? Package Provided
IDSS Specified at Elevated Temperature
Source鈥?
Gate鈥?
Source鈥?
Gate鈥?
1
2
3
4
8
7
6
5
Drain鈥?
Drain鈥?
Drain鈥?
Drain鈥?
Top View
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Drain Current 鈥?Continuous
Drain Current
鈥?Pulsed
Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?Starting TJ = 25擄C
(VDD = 25 V, VGS = 10 V, IL = 2 Apk)
Operating and Storage Temperature Range
Total Power Dissipation @ TA = 25擄C
Thermal Resistance 鈥?Junction to Ambient (1)
Maximum Temperature for Soldering,
Time in Solder Bath
Symbol
VDS
VGS
ID
IDM
EAS
TJ, Tstg
PD
R
胃JA
TL
Value
50
鹵
20
2.0
10
300
鈥?55 to 150
2.0
62.5
260
10
Unit
Volts
Volts
Amps
mJ
擄C
Watts
擄C/W
擄C
Sec
DEVICE MARKING
F1N05
(1) Mounted on 2鈥?square FR4 board (1鈥?sq. 2 oz. Cu 0.06鈥?thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device
MMDF1N05ER2
Reel Size
13鈥?/div>
Tape Width
12 mm embossed tape
Quantity
2500
MiniMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
REV 5
漏
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1
MOTOROLA
1
2
3
4
5
6
