鈥?/div>
Complete Typical Design Curves
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101 MV2104
MV2106 MV2108
MV2109 MV2111
MV2115
6.8-100p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
3
CATHODE
1
ANODE
1
2
CASE 318鈥?8, STYLE 8
SOT鈥?23 (TO鈥?36AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Forward power Dissipation @T
A
= 25擄C
Derate above 25擄C
Symbol
V
R
I
F
P
D
M V 2 1 X X MMBV21XXLT1 Unit
30
Vdc
200
mAdc
280
2.8
+150
鈥?5 to +150
225
1.8
mW
mW/擄C
擄C
擄C
Junction Temperature
Storage Temperature Range
T
J
T
stg
DEVICE MARKING
MMBV2101LT1=M4G
MMBV2103LT1=4H
MMBV2105LT1=4U
Characteristic
Reverse Breakdown Voltage
(I
R
=1.0碌A(chǔ)dc)
Reverse Voltage Leakage Current
(V
R
=25Vdc,T
A
=25擄C)
Diode Capacitance Temperature Coefficient
(V
R
=4.0Vdc,f=1.0MHz)
MMBV2107LT1=4W
MMBV2108LT1=4X
MMBV2109LT1=4J
Symbol
V
(BR)R
I
R
TC
C
Min
30
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
280
Max
鈥?/div>
0.1
鈥?/div>
Unit
Vdc
碌A(chǔ)dc
ppm/擄C
ELECTRICAL CHARACTERISTICS(T
A
=25擄C unless otherwise noted)
MMBV2101~MMBV2109 鈥?/3
MV2101~MV2115
MMBV2101LT1 產(chǎn)品屬性
ON Semiconductor
變?nèi)荻O管
6.1 pF
30 V
SOT-23-3
Reel
Single
+ 150 C
- 55 C
2.5
SMD/SMT
3000
2 / 30
MMBV2101LT1相關(guān)型號(hào)PDF文件下載
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