鈥?/div>
High Current Gain Bandwidth Product
fT = 2000 MHz Min @ 10 mA
3
1
2
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Symbol
VCEO
VCBO
VEBO
Value
鈥?5
鈥?5
鈥?.0
Unit
Vdc
Vdc
Vdc
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
DEVICE MARKING
MMBTH69LT1 = M3J
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
胃JA
PD
556
300
2.4
R
胃JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (IC = 鈥?.0 mAdc, IB = 0)
Collector鈥揃ase Breakdown Voltage (IC = 鈥?0
碌A(chǔ)dc,
IE = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 鈥?0
碌A(chǔ)dc,
IC = 0)
Collector Cutoff Current (VCB = 鈥?0 Vdc, IE = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
鈥?5
鈥?5
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?00
Vdc
Vdc
Vdc
nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 鈥?0 mAdc, VCE = 鈥?0 Vdc)
hFE
30
鈥?/div>
300
鈥?/div>
SMALL鈥揝IGNAL CHARACTERISTICS
Current鈥揋ain 鈥?Bandwidth Product
(IC = 鈥?0 mAdc, VCE = 鈥?0 Vdc, f = 100 MHz)
Collector鈥揃ase Capacitance
(VCE = 鈥?0 Vdc, IE = 0, f = 1.0 MHz)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Thermal Clad is a registered trademark of the Berquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
fT
Crb
2000
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.35
MHz
pF
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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