LESHAN RADIO COMPANY, LTD.
VHF/UHF Transistors
NPN Silicon
3
COLLECTOR
MMBTH10LT1
3
1
BASE
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Symbol
V
V
V
CEO
CBO
EBO
Value
25
30
3.0
Unit
Vdc
Vdc
Vdc
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
胃JA
P
D
556
300
2.4
R
胃JA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
MMBTH10LT1 = 3EM
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0 )
Collector鈥揃ase Breakdown Voltage
(I
C
= 100
碌Adc
, I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 10
碌Adc
, I
C
= 0)
Collector Cutoff Current
( V
CB
= 25Vdc , I
E
= 0 )
Emitter Cutoff Current
( V
EB
= 2.0Vdc , I
C
= 0 )
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
30
3.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
100
Vdc
Vdc
nAdc
nAdc
V
(BR)CEO
25
MMBTH10LT1 產(chǎn)品屬性
10
分離式半導體產(chǎn)品
RF 晶體管 (BJT)
-
NPN
25V
650MHz
-
-
225mW
60 @ 4mA，10V
-
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBTH10LT1OSCT
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