MMBTA92
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
路
路
路
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMBTA42)
Ideal for Medium Power Amplification and
Switching
E
SOT-23
A
C
B
B
TOP VIEW
E
D
G
H
K
J
L
M
C
Dim
A
B
C
D
E
G
H
J
K
L
M
a
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0擄
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8擄
Mechanical Data
路
路
路
路
路
路
路
路
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K3R
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
C
B
E
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
@ T
A
= 25擄C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j
, T
STG
MMBTA92
-300
-300
-5.0
-500
300
417
-55 to +150
Unit
V
V
V
mA
mW
擄C/W
擄C
Characteristic
Collector Current (Note 1) (Note 3)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
@ T
A
= 25擄C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
-300
-300
-5.0
戮
戮
25
40
25
戮
戮
戮
50
Max
戮
戮
戮
-250
-100
Unit
V
V
V
nA
nA
Test Condition
I
C
= -100mA, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -100mA, I
C
= 0
V
CB
= -200V, I
E
= 0
V
CE
= -3.0V, I
C
= 0
I
C
= -1.0mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -30mA, V
CE
= -10V
I
C
= -20mA, I
B
= -2.0mA
I
C
= -20mA, I
B
= -2.0mA
V
CB
= -20V, f = 1.0MHz, I
E
= 0
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
h
FE
V
CE(SAT)
V
BE(SAT)
C
cb
f
T
戮
-0.5
-0.9
6.0
戮
戮
V
V
pF
MHz
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance
rating (R
qJA
), power dissipation rating (P
d
) and power derating curve (figure 1).
DS30060 Rev. 5 - 2
1 of 2
www.diodes.com
MMBTA92
1
2
