LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
PNP Silicon
3
COLLECTOR
MMBTA70LT1
3
1
BASE
2
EMITTER
1
2
MAXIMUM RATINGS
CASE 318鈥?8, STYLE 6
Rating
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
V
CEO
EBO
Value
鈥?0
鈥?.0
鈥?00
Unit
Vdc
Vdc
mAdc
SOT鈥?3 (TO鈥?36AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
胃JA
P
D
556
300
2.4
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
R
胃JA
T
J
, T
stg
DEVICE MARKING
MMBTA70LT1 = M2C
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 鈥?.0 mAdc, I
B
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 鈥?00
碌A(chǔ)dc,
I
C
= 0)
Collector Cutoff Current
( V
CB
= 鈥?0Vdc, I
E
= 0)
V
V
(BR)CEO
鈥?0
鈥?.0
鈥撯€?/div>
鈥?/div>
Vdc
Vdc
nAdc
(BR)EBO
I
CBO
鈥?/div>
h
FE
V
CE(sat)
40
鈥撯€?/div>
鈥?00
400
鈥?.25
ON CHARACTERISTICS
DC Current Gain(I
C
= 鈥?.0mAdc, V
CE
= 鈥?0 Vdc)
Collector鈥揈mitter Saturation Voltage(I
C
= 鈥?0mAdc, I
B
= 鈥?.0 mAdc)
鈥撯€?/div>
Vdc
SMALL鈥揝IGNAL CHARACTERISTICS
Current鈥揋ain 鈥?Bandwidth Product(I
C
= 鈥?.0mAdc, V
CE
= 鈥?0Vdc, f = 100MHz)
Output Capacitance(V
CB
= 鈥?0Vdc, I
E
= 0, f = 1.0 MHz)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
f
T
C
obo
125
MMBTA70LT1 產(chǎn)品屬性
3,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
100mA
40V
250mV @ 1mA，10mA
-
40 @ 5mA，10V
225mW
125MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
帶卷 (TR)
MMBTA70LT1相關(guān)型號(hào)PDF文件下載
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