MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA63LT1/D
Darlington Transistors
PNP Silicon
COLLECTOR 3
BASE
1
MMBTA63LT1
MMBTA64LT1
*
*Motorola Preferred Device
EMITTER 2
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Symbol
VCES
VCBO
VEBO
IC
Value
鈥?0
鈥?0
鈥?0
鈥?00
Unit
Vdc
Vdc
Vdc
mAdc
1
2
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
DEVICE MARKING
MMBTA63LT1 = 2U; MMBTA64LT1 = 2V
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board,(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
Characteristic
Symbol
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage (IC = 鈥?00
碌A(chǔ)dc)
Collector Cutoff Current (VCB = 鈥?0 Vdc)
Emitter Cutoff Current (VEB = 鈥?0 Vdc)
V(BR)CEO
ICBO
IEBO
hFE
MMBTA63
MMBTA64
MMBTA63
MMBTA64
VCE(sat)
VBE(on)
fT
5,000
10,000
10,000
20,000
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?.5
鈥?.0
Vdc
Vdc
鈥?0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?00
鈥?00
Vdc
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain(3)
(IC = 鈥?0 mAdc, VCE = 鈥?.0 Vdc)
(IC = 鈥?0 mAdc, VCE = 鈥?.0 Vdc)
(IC = 鈥?00 mAdc, VCE = 鈥?.0 Vdc)
(IC = 鈥?00 mAdc, VCE = 鈥?.0 Vdc)
鈥?/div>
Collector 鈥?Emitter Saturation Voltage (IC = 鈥?00 mAdc, IB = 鈥?.1 mAdc)
Base鈥揈mitter On Voltage (IC = 鈥?00 mAdc, VCE = 鈥?.0 Vdc)
SMALL鈥?SIGNAL CHARACTERISTICS
Current 鈥?Gain 鈥?Bandwidth Product (IC = 鈥?0 mAdc, VCE = 鈥?.0 Vdc, f = 100 MHz)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
鈮?/div>
300
碌s,
Duty Cycle
鈮?/div>
2.0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
125
鈥?/div>
MHz
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
MMBTA64LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
PNP - 達(dá)林頓
500mA
30V
1.5V @ 100µA，100mA
-
20000 @ 100mA，5V
225mW
125MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBTA64LT1OSCT
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