LESHAN RADIO COMPANY, LTD.
Darlington Transistors
PNP Silicon
3
COLLECTOR
MMBTA63LT1
MMBTA64LT1
3
1
BASE
1
2
2
EMITTER
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CES
V
CBO
V
EBO
Value
鈥?0
鈥?0
鈥?0
鈥?00
Unit
Vdc
Vdc
Vdc
mAdc
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
胃JA
P
D
1.8
556
300
2.4
417
鈥?5 to +150
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
Symbol
P
D
Max
225
Unit
mW
R
胃JA
T
J
, T
stg
DEVICE MARKING
MMBTA63LT1 = 2U MMBTA64LT1 = 2V
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 鈥?00
碌A(chǔ)dc,
)
Collector Cutoff Current
( V
CB
= 鈥?0Vdc)
Emitter Cutoff Current
( V
EB
= 鈥?0Vdc )
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
I
CBO
I
EBO
鈥?0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?00
鈥?00
Vdc
nAdc
nAdc
M30鈥?/3
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