LESHAN RADIO COMPANY, LTD.
Driver Transistors
PNP Silicon
3
COLLECTOR
MMBTA55LT1
MMBTA56LT1
3
1
BASE
2
EMITTER
1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CBO
V
EBO
2
Value
MMBTA55 MMBTA56
鈥?0
鈥?0
鈥?.0
鈥?00
鈥?0
鈥?0
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
胃JA
P
D
556
300
2.4
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
R
胃JA
T
J
, T
stg
DEVICE MARKING
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (3)
(I
C
= 鈥?.0 mAdc, I
B
= 0 )
Emitter鈥揃ase Breakdown Voltage
(I
E
= 鈥?00
碌A(chǔ)dc,
I
C
= 0 )
Collector Cutoff Current
( V
CE
= 鈥?0Vdc, I
B
= 0)
Collector Cutoff Current
( V
CB
= 鈥?0Vdc, I
E
= 0)
( V
CB
= 鈥?0Vdc, I
E
= 0)
MMBTA55
MMBTA56
MMBTA55
MMBTA56
V
(BR)EBO
V
(BR)CEO
Vdc
鈥?0
鈥?0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?.1
Vdc
碌A(chǔ)dc
碌A(chǔ)dc
鈥?/div>
鈥?/div>
鈥?.1
鈥?.1
I
CEO
I
CBO
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
碌s,
Duty Cycle <2.0%.
M29鈥?/2
MMBTA56LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
500mA
80V
250mV @ 10mA，100mA
100nA
100 @ 100mA，1V
225mW
50MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBTA56LT1OSCT
MMBTA56LT1相關(guān)型號(hào)PDF文件下載
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