MMBTA55 / MMBTA56
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
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Epitaxial Planar Die Construction
Complementary NPN Types Available
(MMBTA05 / MMBTA06)
Ideal for Medium Power Amplification and
Switching
B
E
SOT-23
Dim
A
C
B
C
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0擄
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8擄
A
B
C
D
E
G
K
J
L
M
Mechanical Data
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Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
MMBTA55 Marking (See Page 2): K2H
MMBTA56 Marking (See Page 2): K2G
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
TOP VIEW
E
D
G
H
H
J
K
L
M
a
C
B
E
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
@ T
A
= 25擄C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j
, T
STG
MMBTA55
-60
-60
-4.0
-500
300
417
-55 to +150
MMBTA56
-80
-80
Unit
V
V
V
mA
mW
擄C/W
擄C
Characteristic
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes:
@ T
A
= 25擄C unless otherwise specified
Symbol
MMBTA55
MMBTA56
MMBTA55
MMBTA56
MMBTA55
MMBTA56
MMBTA55
MMBTA56
Min
-60
-80
-60
-80
-4.0
戮
戮
Max
Unit
Test Condition
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
戮
戮
戮
-100
-100
V
V
V
nA
nA
I
C
= -100mA, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -100mA, I
C
= 0
V
CB
= -60V, I
E
= 0
V
CB
= -80V, I
E
= 0
V
CE
= -60V, I
BO
= 0V
V
CE
= -80V, I
BO
= 0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
I
C
= -100mA, I
B
= -10mA
I
C
= -100mA, V
CE
= -1.0V
V
CE
= -1.0V, I
C
= -100mA,
f = 100MHz
h
FE
V
CE(SAT)
V
BE(SAT)
100
戮
戮
戮
-0.25
-1.2
戮
V
V
f
T
50
戮
MHz
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30054 Rev. 4 - 2
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www.diodes.com
MMBTA55 / MMBTA56
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