LESHAN RADIO COMPANY, LTD.
Darlington Amplifier Transistors
NPN Silicon
3
COLLECTOR
MMBTA13LT1
MMBTA14LT1
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CES
V
CBO
V
EBO
I
C
Value
30
30
10
300
Unit
Vdc
Vdc
Vdc
mAdc
1
2
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
胃JA
P
D
556
300
2.4
R
胃JA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
MMBTA13LT1 = 1M; MMBTA14LT1 = 1N
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 100
碌A(chǔ)dc,
V
BE
= 0)
Collector Cutoff Current
( V
CB
= 30Vdc, I
E
= 0)
Emitter Cutoff Current
( V
EB
= 10Vdc, I
C
= 0)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
I
EBO
鈥?/div>
100
nAdc
V
(BR)CEO
30
鈥?/div>
鈥?/div>
100
Vdc
nAdc
I
CBO
M26鈥?/5
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