MPSA05/MMBTA05
MPSA05/MMBTA05
NPN General Purpose Amplifier
鈥?This device is designed for general purpose amplifier
applications at collector currents to 300mA.
鈥?Sourced from process 10.
TO-92
1
1. Emitter 2. Base 3. Collector
3
2
SOT-23
1 Mark: 1H
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
Parameter
Value
60
60
4.0
500
-55 ~ +150
Units
V
V
V
mA
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= 1mA, I
B
= 0
I
C
= 100碌A(chǔ), I
C
= 0
V
CE
= 60V, I
B
= 0
V
CB
= 60V, I
E
= 0
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 100mA, I
B
= 10mA
I
C
= 100mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 2V,
f = 100MHz
100
100
100
0.25
1.2
V
V
MHz
Min.
60
4
0.1
0.1
Typ.
Max.
Units
V
V
碌A(chǔ)
碌A(chǔ)
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage *
V
(BR)EBO
I
CEO
I
CBO
h
FE
V
CE(sat)
V
BE(on)
f
T
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
On Characteristics
Small Signal Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
Thermal Characteristics
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JC
R
胃JA
Parameter
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
MPSA05
625
5
83.3
200
357
*MMBTA05
350
2.8
Units
mW
mW/擄C
擄C/W
擄C/W
* Device mounted on FR-4 PCB 1.6鈥?/div>
脳
0.06"
漏2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
1
2
3
4
