MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA05LT1/D
Driver Transistors
NPN Silicon
COLLECTOR
3
1
BASE
MMBTA05LT1
MMBTA06LT1
*
*Motorola Preferred Device
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VCBO
VEBO
IC
MMBTA05
60
60
4.0
500
MMBTA06
80
80
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
1
2
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
MMBTA05LT1 = 1H; MMBTA06LT1 = 1GM
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage (3)
(IC = 1.0 mAdc, IB = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
1. FR鈥?5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
MMBTA05
MMBTA06
V(BR)CEO
MMBTA05
MMBTA06
V(BR)EBO
ICES
ICBO
鈥?/div>
鈥?/div>
0.1
0.1
60
80
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.1
Vdc
Vdc
m
Adc
m
Adc
v
v
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
MMBTA05LT1 產(chǎn)品屬性
10
分離式半導體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
500mA
60V
250mV @ 10mA，100mA
100nA
100 @ 100mA，1V
225mW
100MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBTA05LT1OSCT
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