MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT918LT1/D
VHF/UHF Transistor
NPN Silicon
1
BASE
MMBT918LT1
COLLECTOR
3
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
15
30
3.0
50
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
1
2
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board,(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
MMBT918LT1 = M3B
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 3.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 1.0
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
15
30
3.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
Vdc
Vdc
Vdc
nAdc
Thermal Clad is a trademark of the Bergquist Company
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
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