MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT6520LT1/D
High Voltage Transistor
PNP Silicon
COLLECTOR
3
1
BASE
MMBT6520LT1
Motorola Preferred Device
3
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Base Current
Collector Current 鈥?Continuous
Symbol
VCEO
VCBO
VEBO
IB
IC
Value
鈥?50
鈥?50
鈥?.0
鈥?50
鈥?00
Unit
Vdc
Vdc
Vdc
mA
mAdc
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
DEVICE MARKING
MMBT6520LT1 = 2Z
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
胃JA
PD
556
300
2.4
R
胃JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (IC = 鈥?.0 mA)
Collector鈥揃ase Breakdown Voltage (IC = 鈥?00
碌A(chǔ))
Emitter鈥揃ase Breakdown Voltage (IE = 鈥?0
碌A(chǔ))
Collector Cutoff Current (VCB = 鈥?50 V)
Emitter Cutoff Current (VEB = 鈥?.0 V)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
鈥?50
鈥?50
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?0
鈥?0
Vdc
Vdc
Vdc
nA
nA
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
MMBT6520LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
500mA
350V
1V @ 5mA，50mA
-
20 @ 50mA，10V
225mW
200MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBT6520LT1OSCT
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