LESHAN RADIO COMPANY, LTD.
Darlington Transistors
NPN Silicon
3
COLLECTOR
1
BASE
MMBT6427LT1
3
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CBO
V
EBO
Value
40
40
12
500
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
胃JA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
R
胃JA
P
D
DEVICE MARKING
MMBT6427LT1 = 1V
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage(3)
(I
C
= 10 mAdc, V
BE
= 0)
Collector鈥揃ase Breakdown Voltage
(I
C
= 100
碌Adc,
I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 10
碌Adc,
I
C
= 0)
Collector Cutoff Current
( V
CE
= 25Vdc, I
B
= 0)
Collector Cutoff Current
( V
CB
= 30Vdc, I
E
= 0)
Emitter Cutoff Current
( V
EB
= 10Vdc, I
C
= 0)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
40
40
12
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
50
50
Vdc
Vdc
Vdc
碌Adc
nAdc
nAdc
I
CES
I
CBO
I
EBO
M21鈥?/5
MMBT6472LT1相關(guān)型號PDF文件下載
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