ON Semiconductort
Amplifier Transistors
NPN Silicon
MMBT6428LT1
MMBT6429LT1
3
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VCBO
VEBO
IC
6428LT1
50
60
6.0
200
6429LT1
45
55
Unit
Vdc
Vdc
Vdc
mAdc
1
2
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36)
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
qJA
PD
556
300
2.4
R
qJA
TJ, Tstg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
MMBT6428LT1 = 1KM; MMBT6429LT1 = 1L
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
(IC = 1.0 mAdc, IB = 0)
Collector鈥揃ase Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
(IC = 0.1 mAdc, IE = 0)
Collector Cutoff Current
(VCE = 30 Vdc)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
1. FR鈥? = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
V(BR)CEO
MMBT6428
MMBT6429
V(BR)CBO
MMBT6428
MMBT6429
ICES
鈥?/div>
ICBO
鈥?/div>
IEBO
鈥?/div>
0.01
0.01
碌A(chǔ)dc
0.1
碌A(chǔ)dc
60
55
鈥?/div>
鈥?/div>
碌A(chǔ)dc
50
45
鈥?/div>
鈥?/div>
Vdc
Vdc
漏
Semiconductor Components Industries, LLC, 2001
1
November, 2001 鈥?Rev. 2
Publication Order Number:
MMBT6428LT1/D
MMBT6429LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
200mA
45V
600mV @ 5mA，100mA
100nA
500 @ 100µA，5V
225mW
700MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBT6429LT1OSCT
MMBT6429LT1相關(guān)型號PDF文件下載
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