ON Semiconductort
Darlington Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
40
12
500
Unit
Vdc
MMBT6427LT1
ON Semiconductor Preferred Device
3
Vdc
Vdc
mAdc
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board
(1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
COLLECTOR 3
BASE
1
EMITTER 2
DEVICE MARKING
MMBT6427LT1 = 1V
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 10 mAdc, V
BE
= 0)
Collector鈥揃ase Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
C
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 25 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 10 Vdc, I
C
= 0)
1. FR鈥? = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
V
(BR)CEO
40
V
(BR)CBO
40
V
(BR)EBO
12
I
CES
鈥?/div>
I
CBO
鈥?/div>
I
EBO
鈥?/div>
50
50
nAdc
1.0
nAdc
鈥?/div>
碌A(chǔ)dc
鈥?/div>
Vdc
鈥?/div>
Vdc
Vdc
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 1
Publication Order Number:
MMBT6427LT1/D
MMBT6427LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN - 達(dá)林頓
500mA
40V
1.5V @ 500µA，500mA
1µA
20000 @ 100mA，5V
225mW
-
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBT6427LT1OSCT
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