鈩?/div>
Family
1
BASE
2
EMITTER
COLLECTOR
3
MMBT589LT1
30 Volts
2.0 Amps
PNP Transistor
3
1
MAXIMUM RATINGS (TA = 25擄C)
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Collector Current 鈥?Peak
Symbol
VCEO
VCBO
VEBO
IC
ICM
Max
鈥?0
鈥?50
鈥?5.0
鈥?.0
鈥?.0
Unit
Vdc
Vdc
Vdc
Adc
A
2
CASE 318 鈥?08, STYLE 6
SOT23LF (TO 鈥?236AB)
DEVICE MARKING
MMBT589LT1 = G3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
(Single Pulse < 10 sec.)
Junction and Storage Temperature
1. FR鈥?4 @ Minimum Pad
2. FR鈥?4 @ 1.0 X 1.0 inch Pad
3. ref: Figure 8
Symbol
PD (1)
Max
310
2.5
R
q
JA (1)
PD (2)
403
710
5.7
R
q
JA (2)
PDsingle (3)
575
TJ, Tstg
鈥?55 to +150
擄C
176
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
mW
Thermal Clad is a trademark of the Bergquist Company
m
X
鈩?
MicroExecutive Family of High Performance Surface Mount Devices
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1998
1