LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
NPN Silicon
1
BASE
3
COLLECTOR
MMBT5550LT1
MMBT5551LT1
3
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CBO
V
EBO
2
EMITTER
Value
140
160
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
1
2
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
胃JA
P
D
556
300
2.4
R
胃JA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
MMBT5550LT1 = M1F, MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage(3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector鈥揃ase Breakdown Voltage
(I
C
= 100
碌A(chǔ)dc,
I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 10
碌A(chǔ)dc,
I
C
= 0)
Collector Cutoff Current
( V
CB
= 100Vdc, I
E
= 0)
( V
CB
= 120Vdc, I
E
= 0)
( V
CB
= 100Vdc, I
E
= 0, T
A
=100 擄C)
( V
CB
= 120Vdc, I
E
= 0, T
A
=100 擄C)
Emitter Cutoff Current
( V
BE
= 4.0Vdc, I
C
= 0)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300
碌s,
Duty Cycle = 2.0%.
I
CBO
MMBT5550
MMBT5551
MMBT5550
MMBT5551
I
EBO
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
50
100
50
50
nAdc
碌A(chǔ)dc
nAdc
MMBT5550
MMBT5551
V
(BR)EBO
V
(BR)CEO
140
160
V
(BR)CBO
160
180
6.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
MMBT5550
MMBT5551
Vdc
Vdc
next
MMBT5551LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
60mA
160V
200mV @ 5mA，50mA
100nA
80 @ 10mA，5V
225mW
-
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBT5551LT1OSCT
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