MMBT5551
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
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Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMBT5401)
Ideal for Medium Power Amplification and
Switching
B
E
A
C
B
TOP VIEW
E
SOT-23
Dim
A
C
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0擄
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8擄
B
C
D
E
G
H
J
K
L
M
a
Mechanical Data
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Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K4N
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
D
G
H
K
J
L
M
C
B
E
All Dimensions in mm
@ T
A
= 25擄C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j
, T
STG
MMBT5551
180
160
6.0
200
300
417
-55 to +150
Unit
V
V
V
mA
mW
擄C/W
擄C
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Characteristic
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
@ T
A
= 25擄C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
180
160
6.0
戮
戮
80
80
30
戮
戮
戮
50
100
戮
Max
戮
戮
戮
50
50
戮
250
戮
0.15
0.20
1.0
Unit
V
V
V
nA
mA
nA
Test Condition
I
C
= 100mA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10mA, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100擄C
V
EB
= 4.0V, I
C
= 0
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
CE
= 10V, I
C
= 10mA,
f = 100MHz
V
CE
= 5.0V, I
C
= 200mA,
R
S
= 1.0kW, f = 1.0kHz
h
FE
V
CE(SAT)
V
BE(SAT)
戮
V
V
C
obo
h
fe
f
T
NF
6.0
250
300
8.0
pF
戮
MHz
dB
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30061 Rev. 4 - 2
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MMBT5551
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