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MMBT5550 NPN General Purpose Amplifier

August 2005

MMBT5550

NPN General Purpose Amplifier

鈥?This device is designed for general purpose high voltage amplifiers

and gas discharge display drivers.

3

2

SOT-23

1

Marking: 1F

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings *

T

Symbol

V

CEO

V

CBO

V

EBO

I

C

T

J

, T

stg

NOTES:

a

= 25擄C unless otherwise noted

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector current

Junction and Storage Temperature

- Continuous

Value

140

160

6.0

600

-55 ~ +150

Units

V

V

V

mA

擄C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics

Symbol

Off Characteristics

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

h

FE

T

a

= 25擄C unless otherwise noted

Parameter

Collector-Emitter Breakdown Voltage *

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

Test Condition

I

C

= 1.0mA, I

B

= 0

I

C

= 100碌A(chǔ), I

E

= 0

I

E

= 10mA, I

C

= 0

V

CB

= 100V, I

E

= 0

V

CB

= 100V, I

E

= 0, T

a

= 100擄C

V

EB

= 4.0V, I

C

= 0

I

C

= 1.0mA, V

CE

= 5.0V

I

C

= 10mA, V

CE

= 5.0V

I

C

= 50mA, V

CE

= 5.0V

I

C

= 10mA, I

B

= 1.0mA

I

C

= 50mA, I

B

= 5.0mA

I

C

= 10mA, I

B

= 1.0mA

I

C

= 50mA, I

B

= 5.0mA

Min.

140

160

6.0

Max.

Units

V

V

V

100

100

50

nA

碌A(chǔ)

nA

On Characteristics

DC Current Gain

60

60

20

250

0.15

0.25

1.0

1.2

V

V

V

V

V

CE(sat)

V

BE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

漏2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

MMBT5550 Rev. A

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