LESHAN RADIO COMPANY, LTD.
High Voltage Transistor
PNP Silicon
MMBT5401LT1
3
COLLECTOR
3
1
BASE
1
2
2
EMITTER
CASE
318鈥?8, STYLE 6
SOT鈥?23 (TO鈥?36AB)
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
鈥?150
鈥?160
鈥?5.0
鈥?500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T
A
=25 擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
胃JA
T
J
, T
stg
2.4
417
鈥?5to+150
mW/擄C
擄C/W
擄C
Symbol
P
D
Max
225
1.8
R
胃JA
Unit
mW
mW/擄C
擄C/W
mW
556
300
P
D
DEVICE MARKING
MMBT5401LT1=2L
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
V
(BR)CEO
鈥?150
V
(BR)CBO
鈥?160
V
(BR)EBO
-5.0
I
CES
鈥?/div>
鈥?/div>
鈥?50
鈥?50
nAdc
碌A(chǔ)dc
鈥?/div>
鈥?/div>
Vdc
鈥?/div>
Vdc
Min
Ma x
Unit
Vdc
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 鈥?.0 mAdc, I
B
= 0)
Collector鈥揃ase Breakdown Voltage
(I
C
= 鈥?00
碌A(chǔ)dc,
I
E
= 0)
Emitter-BAse Breakdown Voltage
(I
E
= 鈥?0碌A(chǔ)dc,I
C
=0)
Collector Cutoff Current
(V
CB
= 鈥?20 Vdc, I
E
= 0)
(V
CB
= 鈥?20 Vdc, I
E
= 0, T
A
=100 擄C)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M19鈥?/4
MMBT5401LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
100mA
150V
500mV @ 5mA，50mA
50nA
60 @ 10mA，5V
225mW
300MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBT5401LT1OSCT
MMBT5401LT1相關(guān)型號(hào)PDF文件下載
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