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MMBT5210 Datasheet

  • MMBT5210

  • NPN General Purpose Amplifier

  • 7頁

  • FAIRCHILD

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2N5210/MMBT5210
2N5210/MMBT5210
NPN General Purpose Amplifier
C
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1碌A to 50 mA.
C
BE
TO-92
B
E
SOT-23
Mark: 3M
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25擄C unless otherwise noted
Parameter
Value
50
50
4.5
100
-55 to +150
Units
V
V
V
mA
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JC
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
2N5210
625
5.0
83.3
200
MMBT5210
350
2.8
357
Units
mW
mW/擄C
擄C/W
擄C/W
錚?/div>
2002 Fairchild Semiconductor Corporation
2N5210, Rev B

MMBT5210 產(chǎn)品屬性

  • 3,000

  • 分離式半導體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 100mA

  • 50V

  • 700mV @ 1mA，10mA

  • -

  • 200 @ 100µA，5V

  • 350mW

  • 30MHz

  • 表面貼裝

  • TO-236-3，SC-59，SOT-23-3

  • SOT-23

  • 帶卷 (TR)

  • MMBT5210-NDMMBT5210TR

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