MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT5088LT1/D
Low Noise Transistors
NPN Silicon
1
BASE
COLLECTOR
3
MMBT5088LT1
MMBT5089LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VCBO
VEBO
IC
5088LT1
30
35
4.5
50
2
EMITTER
1
3
5089LT1
25
30
Unit
Vdc
Vdc
Vdc
mAdc
2
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
1. FR鈥?5 = 1.0
0.75
2. Alumina = 0.4 0.3
V(BR)CEO
MMBT5088
MMBT5089
V(BR)CBO
MMBT5088
MMBT5089
ICBO
MMBT5088
MMBT5089
IEBO
MMBT5088
MMBT5089
鈥?/div>
鈥?/div>
50
100
鈥?/div>
鈥?/div>
50
50
nAdc
35
30
鈥?/div>
鈥?/div>
nAdc
30
25
鈥?/div>
鈥?/div>
Vdc
Vdc
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
MMBT5088LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
50mA
30V
500mV @ 1mA，10mA
-
300 @ 100µA，5V
225mW
50MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBT5088LT1OSCT
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