LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3
COLLECTOR
MMBT4403LT1
3
1
BASE
1
2
2
EMITTER
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
鈥?40
鈥?40
鈥?5.0
鈥?600
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318鈥?8, STYLE 6
SOT鈥?23 (TO鈥?36AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR 鈥? Board (1)
T
A
=25 擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
胃JA
P
D
Symbol
P
D
Max
225
1.8
556
300
2.4
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
R
胃JA
T
J
, T
stg
DEVICE MARKING
MMBT4403LT1 = 2T
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
V
(BR)CEO
鈥?40
V
(BR)CBO
鈥?40
V
(BR)EBO
鈥?5.0
I
BEV
鈥?/div>
I
CEX
鈥?/div>
鈥?0.1
鈥?0.1
碌A(chǔ)dc
鈥?/div>
碌A(chǔ)dc
鈥?/div>
Vdc
鈥?/div>
Vdc
Min
Max
Unit
Vdc
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (3)
(I
C
= 鈥?.0 mAdc, I
B
= 0)
Collector鈥揃ase Breakdown Voltage
(I
C
= 鈥?.1mAdc, I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 鈥?.1mAdc, I
C
= 0)
Base Cutoff Current
(V
CE
= 鈥?5 Vdc, V
EB
= 鈥?.4 Vdc)
Collector Cutoff Current
(V
CE
= 鈥?5 Vdc, V
EB
= 鈥?.4 Vdc)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
碌s;
Duty Cycle <2.0%.
O15鈥?/5
MMBT4403LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
600mA
40V
750mV @ 50mA，500mA
-
100 @ 150mA，2V
225mW
200MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBT4403LT1OSCT
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