MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT4401LT1/D
Switching Transistor
NPN Silicon
COLLECTOR
3
1
BASE
MMBT4401LT1
Motorola Preferred Device
3
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
40
60
6.0
600
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
1
2
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
MMBT4401LT1 = 2X
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
1. FR鈥?5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
鈮?/div>
300
碌s,
Duty Cycle
鈮?/div>
2.0%.
V(BR)CEO
40
V(BR)CBO
60
V(BR)EBO
6.0
IBEV
鈥?/div>
ICEX
鈥?/div>
0.1
0.1
碌A(chǔ)dc
鈥?/div>
碌A(chǔ)dc
鈥?/div>
Vdc
鈥?/div>
Vdc
Vdc
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
MMBT4401LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
600mA
40V
750mV @ 50mA，500mA
-
100 @ 150mA，1V
225mW
250MHz
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBT4401LT1OSCT
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