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MMBT4401K PNP Epitaxial Silicon Transistor

February 2005

MMBT4401K

PNP Epitaxial Silicon Transistor

Switching Transistor

3

Marking

2

1

2XK

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Storage Temperature

T

a

= 25擄C unless otherwise noted

Parameter

Value

60

40

6

600

350

150

Units

V

V

V

mA

mW

擄C

Electrical Characteristics

T

a

=25擄C unless otherwise noted

Symbol

BV

CBO

BV

CEO

BV

EBO

I

BEV

I

CEX

h

FE

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage *

Emitter-Base Breakdown Voltage

Base Cut-off Current

Collector Cut-off Current

DC Current Gain *

Test Condition

I

C

= 100碌A(chǔ), I

E

= 0

I

C

= 1.0mA, I

B

= 0

I

E

= 100碌A(chǔ), I

C

= 0

V

CE

= 35V, V

EB

= 0.4V

V

CE

= 35V, V

EB

= 0.4V

V

CE

= 1V, I

C

= 0.1mA

V

CE

= 1V, I

C

= 1mA

V

CE

= 1V, I

C

= 10mA

V

CE

= 1V, I

C

= 150mA

V

CE

= 2V, I

C

= 500mA

I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

I

C

= 20mA, V

CE

= 10V, f = 100MHz

V

CB

=5V, I

E

=0, f=100KHz

V

CC

= 30V, V

BE

= 2V

I

C

= 150mA, I

B1

= 15mA

V

CC

= 30V, I

C

= 150mA

I

B1

= I

B2

= 15mA

Min.

60

40

6

Max.

Units

V

V

V

100

100

20

40

80

100

40

nA

nA

300

0.4

0.75

V

V

V

V

MHz

6.5

35

255

pF

ns

ns

V

CE

(sat)

V

BE

(sat)

f

T

C

ob

t

ON

t

OFF

Collector-Emitter Saturation Voltage *

Base-Emitter Saturation Voltage *

Current Gain Bandwidth Product

Output Capacitance

Turn On Time

Turn Off Time

0.75

250

0.95

1.2

* Pulse Test: Pulse Width鈮?00碌s, Duty Cycle鈮?%

漏2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

MMBT4401K Rev. A

next

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