MMBT4356
MMBT4356
PNP General Purpose Amplifier
鈥?This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 500mA.
鈥?Sourced from process 67.
鈥?See TN4033A for characteristics.
3
2
SOT-23
Mark: 82
1. Base 2. Emitter 3. Collector
1
Absolute Maximum Ratings *
T
A
=25擄C unless otherwise noted
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
- Continuous
Operating and Storate Junction Temperature Range
Parameter
Value
-80
-80
-5.0
-800
-55 ~ +150
Units
V
V
V
mA
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JA
Total Device Dissipation
Derate above 25
擄
C
Thermal Resistance, Junction to Ambient
Parameter
Max.
350
2.8
357
Units
mW
mW/擄C
擄C/W
漏2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002