PN4355 / MMBT4355
Discrete POWER & Signal
Technologies
PN4355
MMBT4355
C
E
C
BE
TO-92
SOT-23
Mark: 81
B
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 67. See TN4033A for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25擄C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
60
60
10
800
-55 to +150
Units
V
V
V
mA
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JC
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PN4355
625
5.0
83.3
200
Max
*MMBT4355
350
2.8
357
Units
mW
mW/擄C
擄
C/W
擄
C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
漏
1997 Fairchild Semiconductor Corporation
1
2
