LESHAN RADIO COMPANY, LTD.
Chopper Transistor
PNP Silicon
3
COLLECTOR
3
1
BASE
MMBT404ALT1
1
2
EMITTER
2
CASE 318鈥?8, STYLE 6
SOT鈥?23 (TO鈥?36AB)
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
鈥?35
鈥?40
鈥?25
鈥?150
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
T
A
=25 擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
胃JA
P
D
1.8
556
300
2.4
417
鈥?5 to +150
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
Symbol
P
D
Max
225
Unit
mW
R
胃JA
T
J
, T
stg
DEVICE MARKING
MMBT404ALT1 = 2N
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 鈥?0 mAdc, I
B
= 0)
Collector鈥?Emitter Breakdown Voltage
(I
C
= 鈥?0
碌A(chǔ)dc,
I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 鈥?0
碌A(chǔ)dc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 鈥?0Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 鈥?0Vdc, I
C
= 0)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
V
V
(BR)CEO
鈥?35
鈥?40
鈥?25
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?00
鈥?00
Vdc
Vdc
Vdc
nAdc
nAdc
(BR)CBO
(BR)EBO
I
CBO
I
EBO
O1鈥?/2
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