General Purpose Transistor (PNP)
COMCHIP
www.comchiptech.com
MMBT3906
PNP Silicon Type
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMBT3904)
Ideal for Medium Power Amplification and
Switching
SOT-23
.119 (3.0)
.110 (2.8)
.020 (0.5)
Top View
.056 (1.40)
.047 (1.20
)
3
1
COLLECTOR
2
.006 (0.15)max.
.006 (0.15)
.002 (0.05)
3
1
BASE
.037(0.95) .037(0.95)
2
EMITTER
.020 (0.5)
.020 (0.5)
.103 (2.6)
.086 (2.2)
Dimensions in inches (millimeters)
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
鈥?0
鈥?0
鈥?.0
鈥?00
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
MDS0306002A
.044 (1.10)
.035 (0.90)
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