MMBT3904K NPN Epitaxial Silicon Transistor
February 2005
MMBT3904K
NPN Epitaxial Silicon Transistor
General Purpose Transistor
3
Marking
2
1
1AK
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
T
a
= 25擄C unless otherwise noted
Parameter
Value
60
40
6
200
350
150
Units
V
V
V
mA
mW
擄C
Collector Power Dissipation
Storage Temperature
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain *
Test Condition
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 30V, V
EB
= 3V
V
CE
= 1V, I
C
= 0.1mA
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 50mA
V
CE
= 1V, I
C
= 100mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 5V, I
E
= 0, f = 1MHz
V
CE
= 20V, I
C
= 10mA, f = 100MHz
I
C
= 100碌A(chǔ), V
CE
= 5V, R
S
= 1K鈩?/div>
f = 10Hz to 15.7KHz
V
CC
= 3V, V
BE
= 0.5V
I
C
= 10mA, I
B1
= 1mA
V
CC
= 3V, I
C
= 10mA, I
B1
= I
B2
= 1mA
Min.
60
40
6
Max.
Units
V
V
V
50
40
70
100
60
30
nA
300
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
NF
t
ON
t
OFF
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
Turn On Time
Turn Off Time
0.2
0.3
0.65
0.85
0.95
4
300
5
70
250
V
V
V
V
pF
MHz
dB
ns
ns
* Pulse Test: Pulse Width鈮?00碌s, Duty Cycle鈮?%
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MMBT3904K Rev. A
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