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MMBT3646

MMBT3646

Switching Transistor

3

2

1

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CEO

V

CES

V

CBO

V

EBO

I

C

P

D

T

J

, T

STG

Collector-Emitter Voltage

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current (DC)

Total Device Dissipation

- Derate above 25擄C

- Continuous

@ T

A

=25擄C

Parameter

Value

15

40

40

5

300

625

5

150

mA

mW

mW/擄C

擄C

Units

V

V

V

Operating and Storage Junction Temperature Range

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

Off Characteristics

V

(BR)CES

V

CEO(

SUS

)

V

(BR)CBO

V

(BR)EBO

I

CES

Parameter

Min.

40

15

40

5

0.5

3

30

25

15

120

Typ.

Max.

Units

V

V

V

V

碌A(chǔ)

Collector-Emitter Breakdown Voltage (I

C

= 100碌A(chǔ)dc, V

BE

= 0)

Collector-Emitter Sustaining Voltage (1) (I

C

= 10mAdc, I

B

= 0)

Collector-Base Breakdown Voltage (I

C

= 100碌A(chǔ)dc, I

E

= 0)

Emitter-Base Breakdown Voltage (I

E

= 100碌A(chǔ)dc, I

C

= 0)

Collector Cut-off Current (V

CE

= 20Vdc, V

BE

= 0)

(V

CE

= 20Vdc, V

BE

= 0, T

A

= 65擄C)

DC Current Gain (I

C

= 30mAdc, V

CE

= 0.4Vdc)

(I

C

= 100mAdc, V

CE

= 0.5Vdc)

(I

C

= 300mAdc, V

CE

= 1Vdc)

Collector-Emitter Saturation Voltage (I

C

= 30mAdc, I

B

= 3mAdc)

(I

C

= 100mAdc, I

B

= 10mAdc)

(I

C

= 300mAdc, I

B

= 30mAdc)

(I

C

= 30mA, I

B

= 3mA, T

A

=65擄C)

Base-Emitter Saturation Voltage (I

C

= 30mAdc, I

B

= 3mAdc)

(I

C

= 100mAdc, I

B

= 10mAdc)

(I

C

= 300mAdc, I

B

= 30mAdc)

0.73

On Characteristics (1)

h

FE

V

CE(sat)

0.2

0.28

0.5

0.3

0.95

1.2

1.7

V

V

BE(sat)

V

漏2002 Fairchild Semiconductor Corporation

Rev. A1, November 2002

next

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