MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT3640LT1/D
Switching Transistor
PNP Silicon
1
BASE
COLLECTOR
3
MMBT3640LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
鈥?2
鈥?2
鈥?.0
鈥?0
2
EMITTER
1
3
Unit
Vdc
Vdc
Vdc
mAdc
2
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
MMBT3640LT1 = 2J
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage (IC = 鈥?00
碌Adc,
VBE = 0)
Collector 鈥?Emitter Sustaining Voltage(1) (IC = 鈥?0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage (IC = 鈥?00
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage (IE = 鈥?00
m
Adc, IC = 0)
Collector Cutoff Current
(VCE = 鈥?.0 Vdc, VBE = 0)
(VCE = 鈥?.0 Vdc, VBE = 0, TA = 65擄C)
Base Cutoff Current (VCE = 鈥?.0 Vdc, VEB = 0)
1. FR鈥?5 = 1.0
0.75
2. Alumina = 0.4 0.3
V(BR)CES
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICES
鈥?/div>
鈥?/div>
IB
鈥?/div>
鈥?.01
鈥?.0
鈥?0
nAdc
鈥?2
鈥?2
鈥?2
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
Vdc
碌Adc
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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