MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2369LT1/D
Switching Transistors
NPN Silicon
1
BASE
COLLECTOR
3
MMBT2369LT1
MMBT2369ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VCES
VCBO
VEBO
IC
Value
15
40
40
4.5
200
2
EMITTER
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
1
2
3
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board(1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage (3)
(IC = 10 mAdc, IB = 0)
Collector 鈥?Emitter Breakdown Voltage
(IC = 10
碌A(chǔ)dc,
VBE = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150擄C)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
1. FR鈥?5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
鈮?/div>
300
碌s,
Duty Cycle
鈮?/div>
2.0%.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO
15
V(BR)CES
40
V(BR)CBO
40
V(BR)EBO
4.5
ICBO
鈥?/div>
鈥?/div>
ICES
MMBT2369A
鈥?/div>
鈥?/div>
0.4
鈥?/div>
鈥?/div>
0.4
30
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
Vdc
碌A(chǔ)dc
碌A(chǔ)dc
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
MMBT2369LT1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
200mA
15V
250mV @ 1mA，10mA
-
40 @ 10mA，350mV
225mW
-
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
剪切帶 (CT)
MMBT2369LT1OSCT
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