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MMBT2222ALT1 Datasheet

  • MMBT2222ALT1

  • General Purpose Transistors(NPN Silicon)

  • 5頁(yè)

  • LRC

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上傳產(chǎn)品規(guī)格書

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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3
COLLECTOR
1
BASE
MMBT2222LT1
MMBT2222ALT1
3
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
CBO
V
EBO
2
EMITTER
1
2
2222
30
60
5.0
600
2222A
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
胃JA
P
D
1.8
556
300
2.4
417
鈥?5 to +150
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
Symbol
P
D
Max
225
Unit
mW
R
胃JA
T
J
, T
stg
DEVICE MARKING
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P;
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
Collector鈥揃ase Breakdown Voltage
(I
C
= 10
碌A(chǔ)dc,
I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 10
碌A(chǔ)dc,
I
C
= 0)
Collector Cutoff Current
( V
CE
= 60 Vdc, I
EB(off)
= 3.0Vdc)
Collector Cutoff Current
(V
CB
= 50 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125擄C)
(V
CB
= 60 Vdc, I
E
= 0, T
A
= 125擄C)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
V
(BR)EBO
I
CEX
I
CBO
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
I
EBO
I
BL
鈥撯€?/div>
鈥撯€?/div>
鈥撯€?/div>
鈥撯€?/div>
鈥?/div>
鈥?/div>
0.01
0.01
10
10
100
20
nAdc
nAdc
V
(BR)CBO
V
(BR)CEO
30
40
60
75
5.0
6.0
鈥?/div>
鈥?/div>
鈥撯€?/div>
10
Vdc
nAdc
碌A(chǔ)dc
鈥?/div>
鈥撯€?/div>
鈥?/div>
Vdc
Vdc
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
MMBT2222A
Base Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
MMBT2222A
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
O4鈥?/5

MMBT2222ALT1 產(chǎn)品屬性

  • 10

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 600mA

  • 40V

  • 1V @ 50mA,500mA

  • -

  • 100 @ 150mA,10V

  • 225mW

  • 300MHz

  • 表面貼裝

  • TO-236-3,SC-59,SOT-23-3

  • SOT-23

  • 剪切帶 (CT)

  • MMBT2222ALT1OSCT

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