MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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General Purpose Transistors
NPN Bipolar Junction Transistor
(Complementary PNP Device: MMBT2131T1/T3)
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25擄C
Total Power Dissipation @ TC = 85擄C
Thermal Resistance 鈥?Junction to Ambient (1)
Total Power Dissipation @ TC = 25擄C
Total Power Dissipation @ TC = 85擄C
Thermal Resistance 鈥?Junction to Ambient (2)
Operating and Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
PD
R
q
JA
PD
PD
R
q
JA
TJ, Tstg
Value
30
40
5.0
700
350
342
178
366
665
346
188
鈥?55 to +150
Unit
V
V
V
mA
mA
mW
mW
擄C/W
mW
mW
擄C/W
擄C
MMBT2132T1
MMBT2132T3
0.7 AMPERES
30 VOLTS 鈥?V(BR)CEO
342 mW
6
5
4
1
2
3
CASE 318 F鈥?02, STYLE 2
SC鈥?9 鈥?6 Lead
COLLECTOR
PINS 2, 5
BASE
PIN 6
EMITTER
PIN 3
NPN
Symbol
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc)
Collector 鈥?Emitter Breakdown Voltage
(IC = 10 mAdc)
Emitter鈥揃ase Breakdown Voltage
(IE = 100
m
Adc)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125擄C)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
V(BR)CBO
40
V(BR)CEO
30
V(BR)EBO
5.0
ICBO
鈥?/div>
鈥?/div>
IEBO
鈥?/div>
鈥?/div>
10
鈥?/div>
鈥?/div>
1.0
10
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
鈥?/div>
鈥?/div>
Vdc
Vdc
m
Adc
m
Adc
ON CHARACTERISTICS
DC Current Gain
(VCE = 3.0 Vdc, IC = 100 mAdc)
Collector 鈥?Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
Collector 鈥?Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
Base鈥揈mitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
Collector鈥揈mitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
hFE
150
VCE(sat)
鈥?/div>
VCE(sat)
鈥?/div>
VBE(sat)
鈥?/div>
VBE(on)
鈥?/div>
鈥?/div>
1.0
鈥?/div>
1.1
Vdc
鈥?/div>
0.4
Vdc
鈥?/div>
0.25
Vdc
鈥?/div>
鈥?/div>
Vdc
Vdc
1. Minimum FR鈥? or G鈥?0 PCB, Operating to Steady State.
2. Mounted onto a 2鈥?square FR鈥? Board (1鈥?sq. 2 oz Cu 0.06鈥?thick single sided), Operating to Steady State.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Motorola Bipolar
漏
Motorola, Inc. 1998
Power Transistor Device Data
3鈥?
MMBT2132T3 產(chǎn)品屬性
10,000
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
700mA
30V
400mV @ 70mA，700mA
-
150 @ 100mA，3V
342mW
-
表面貼裝
SC-74，SOT-457
SC-74
帶卷 (TR)
MMBT2132T3OS
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